Magnetically Enhanced, Inductively Coupled Plasma Source for a Focused Ion Beam System
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US Patent ​7241361B2
Magnetically Enhanced, Inductively Coupled Plasma Source for a Focused Ion Beam System
Lawrence Scipioni Co-Inventor
Details of Patent
This patent is for Magnetically Enhanced, Inductively Coupled Plasma Source for a Focused Ion Beam System. Focused ion beams are commonly used in the characterization or treatment of materials on microscopic and nanoscopic scales. This invention is characterized as a method for producing a focused ion beam, consisting of the following steps:
  • applying RF power to an antenna that inductively couples energy to a plasma to induce ionization of the plasma in proximity of the antenna;
  • providing impedance matching circuitry to adjust the electrical phase shift across the antenna to reduce modulation of the plasma potential;
  • extracting an ionized beam from a region of extraction in proximity to the antenna; and
  • applying a focusing mechanism to the ion beam extracted from the region.