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June 18, 2025
New Gallium Transistors Could Make Smartphones Better and Cheaper
New Gallium Transistors Could Make Smartphones Better and Cheaper
Researchers at MIT and their partners have achieved a major breakthrough by developing a scalable process to integrate gallium nitride (GaN) transistors directly onto silicon CMOS chips. This innovation overcomes long-standing barriers of high costs and difficult integration, paving the way for wider use of GaN in everyday electronics.
GaN is already the second most widely used semiconductor after silicon, valued for its role in lighting, radar, and power electronics. But unlocking its full potential has required connecting separate GaN chips to traditional silicon circuits, creating expensive and complex systems.
The team’s new method simplifies that process by creating small GaN transistors (called dielets) on a GaN wafer. Each dielet is just 240 by 410 microns in size. These tiny components are then transferred to a silicon chip using a specialized low-temperature copper bonding technique. This approach protects both materials and avoids costly materials like gold or high-temperature processes that could damage equipment.
With only small amounts of GaN needed, costs remain low while delivering major performance gains. Spreading the dielets across the silicon also helps control heat, keeping devices cooler during operation.
To prove the concept, the researchers built a power amplifier, a key part of smartphones. The result was stronger signals, improved efficiency, and better energy use—leading to better calls, faster connections, and longer battery life.
Importantly, this technology can be produced in standard semiconductor facilities. The researchers believe this hybrid chip approach could not only transform wireless devices but may also support future advances in quantum computing. Learn more about this topic here.
GaN is already the second most widely used semiconductor after silicon, valued for its role in lighting, radar, and power electronics. But unlocking its full potential has required connecting separate GaN chips to traditional silicon circuits, creating expensive and complex systems.
The team’s new method simplifies that process by creating small GaN transistors (called dielets) on a GaN wafer. Each dielet is just 240 by 410 microns in size. These tiny components are then transferred to a silicon chip using a specialized low-temperature copper bonding technique. This approach protects both materials and avoids costly materials like gold or high-temperature processes that could damage equipment.
With only small amounts of GaN needed, costs remain low while delivering major performance gains. Spreading the dielets across the silicon also helps control heat, keeping devices cooler during operation.
To prove the concept, the researchers built a power amplifier, a key part of smartphones. The result was stronger signals, improved efficiency, and better energy use—leading to better calls, faster connections, and longer battery life.
Importantly, this technology can be produced in standard semiconductor facilities. The researchers believe this hybrid chip approach could not only transform wireless devices but may also support future advances in quantum computing. Learn more about this topic here.
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