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January 16, 2025
Ultrathin Niobium Phosphide Films Revolutionize Nanoelectronics
Ultrathin Niobium Phosphide Films Revolutionize Nanoelectronics
As nanoscale electronics grow smaller and more complex, traditional conductors like copper are reaching their limits. A groundbreaking study published in Science by Stanford researchers reveals that ultrathin niobium phosphide films outperform copper in electrical conductivity at thicknesses below 5 nanometers. This advancement could transform nanoelectronics, enabling more energy-efficient chips and enhanced computational power.
Niobium phosphide, a topological semimetal, conducts electricity more efficiently in its ultrathin form due to its highly conductive surface layers. Unlike copper, which loses efficiency when thinner than 50 nanometers, niobium phosphide leverages its unique structure to improve conductivity as it gets thinner. Crucially, these films can be deposited at temperatures as low as 400°C, making them compatible with modern silicon-based chip fabrication processes.
"Traditional crystalline materials require high deposition temperatures, which can damage silicon chips," explained Yuri Suzuki, professor of applied physics and co-author of the study. "Niobium phosphide’s ability to perform without perfect crystallinity opens the door for real-world applications."
The deposition techniques used by the Stanford team offer a major breakthrough. By creating slightly disordered or amorphous films, they achieved exceptional conductivity without the need for precise crystalline structures. This process is less energy-intensive and more adaptable to existing fabrication technologies.
While copper remains superior for thicker wires, niobium phosphide shows immense promise for ultrathin connections in advanced chips, particularly in data centers and high-density electronics. Researchers are already exploring alternative topological semimetals to further enhance these materials' performance, paving the way for a new era in nanoelectronics manufacturing. Learn more here.
Niobium phosphide, a topological semimetal, conducts electricity more efficiently in its ultrathin form due to its highly conductive surface layers. Unlike copper, which loses efficiency when thinner than 50 nanometers, niobium phosphide leverages its unique structure to improve conductivity as it gets thinner. Crucially, these films can be deposited at temperatures as low as 400°C, making them compatible with modern silicon-based chip fabrication processes.
"Traditional crystalline materials require high deposition temperatures, which can damage silicon chips," explained Yuri Suzuki, professor of applied physics and co-author of the study. "Niobium phosphide’s ability to perform without perfect crystallinity opens the door for real-world applications."
The deposition techniques used by the Stanford team offer a major breakthrough. By creating slightly disordered or amorphous films, they achieved exceptional conductivity without the need for precise crystalline structures. This process is less energy-intensive and more adaptable to existing fabrication technologies.
While copper remains superior for thicker wires, niobium phosphide shows immense promise for ultrathin connections in advanced chips, particularly in data centers and high-density electronics. Researchers are already exploring alternative topological semimetals to further enhance these materials' performance, paving the way for a new era in nanoelectronics manufacturing. Learn more here.
January 31, 2025
NSIC Invests in High-Performance Single-Crystal Diamond Substrates for Commercial and Defense Applications
NSIC Invests in High-Performance Single-Crystal Diamond Substrates for Commercial and Defense Applications
Great Lakes Crystal Technologies (GLCT), the U.S. leader in single-crystal high-performance diamond materials, has received a $2.7M award from National Security Innovation Capital (NSIC). This funding will enable GLCT to elevate the manufacturing readiness level (MRL) of the world’s first large-area, high-performance single-crystal diamond substrate for quantum sensing, microchip thermal management, and advanced electronics within 18 months.
“High-performance diamond is a transformative platform material for future defense systems and national security applications,” said Dr. Timothy Grotjohn, GLCT’s Co-Founder and CEO. “This project positions GLCT and the U.S. as first movers in delivering device-capable diamond substrates at scale.”
Founded in 2019 as a Michigan State University technology startup, GLCT has secured over $20M in federal investments to drive innovation across quantum sensors, advanced packaging, and power electronics. The company’s proprietary chemical vapor deposition (CVD) reactors are exclusively designed and built in the U.S., supported by a robust patent portfolio licensed from Michigan State University (10 issued, 4 pending).
As the only fully U.S.-based manufacturer of device-ready single-crystal diamond materials, GLCT is pioneering solutions with wide-ranging implications for national security and commercial technologies.
“This milestone underscores our commitment to supporting NSIC’s mission to secure America’s technological future,” added Dr. Grotjohn. Learn more about this topic here.
“High-performance diamond is a transformative platform material for future defense systems and national security applications,” said Dr. Timothy Grotjohn, GLCT’s Co-Founder and CEO. “This project positions GLCT and the U.S. as first movers in delivering device-capable diamond substrates at scale.”
Founded in 2019 as a Michigan State University technology startup, GLCT has secured over $20M in federal investments to drive innovation across quantum sensors, advanced packaging, and power electronics. The company’s proprietary chemical vapor deposition (CVD) reactors are exclusively designed and built in the U.S., supported by a robust patent portfolio licensed from Michigan State University (10 issued, 4 pending).
As the only fully U.S.-based manufacturer of device-ready single-crystal diamond materials, GLCT is pioneering solutions with wide-ranging implications for national security and commercial technologies.
“This milestone underscores our commitment to supporting NSIC’s mission to secure America’s technological future,” added Dr. Grotjohn. Learn more about this topic here.